IXA33IF1200HB copack xpt igbt 2(c) 3(e) (g) 1 part number IXA33IF1200HB backside: collector c25 ce(sat) vv 1.8 ces 58 1200 = v= v i= a features / advantages: applications: package: easy paralleling due to the positive temperature coefficient of the on-state voltage rugged xpt design (xtreme light punch through) results in: - short circuit rated for 10 sec. - very low gate charge - low emi - square rbsoa @ 3x ic thin wafer technology combined with the xpt design results in a competitive low vce(sat) sonic? diode - fast and soft reverse recovery - low operating forward voltage ac motor drives solar inverter medical equipment uninterruptible power supply air-conditioning systems welding equipment switched-mode and resonant-mode power supplies inductive heating, cookers pumps, fans to-247 industry standard outline rohs compliant epoxy meets ul 94v-0 ixys reserves the right to change limits, conditions and dimensions. 20100702b data according to iec 60747and per semiconductor unless otherwise specified ? 2010 ixys all rights reserved
IXA33IF1200HB -di /dt = a/s t = c v ces v 1200 collector emitter voltage collector emitter saturation voltage t = 25c collector current a 58 a c vj symbol definition ratings typ. max. min. conditions unit 34 v v ce(sat) total power dissipation 250 w collector emitter leakage current 6.5 v turn-on delay time 70 ns t reverse bias safe operating area a v ges v 20 v gem max. transient gate emitter voltage t = c c v p tot gate emitter threshold voltage rbsoa 75 30 t = c t = c vj v max. dc gate voltage i c25 i c t = 25c vj i = a; v = 15 v cge t = 25c vj v ge(th) i ces i = ma; v = v cgece v = v ; v = 0 v ce ces ge i ges t = 25c vj gate emitter leakage current v = 20 v ge 2.1 2.1 5.9 5.4 ma 0.1 ma 0.1 500 g(on) total gate charge v = v; v = 15 v; i = a ce q ge c 76 nc t t t e e d(on) r d(off) f on off 40 ns 250 ns 100 ns 2.5 mj 3 mj current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load v = v; i = a v = 15 v; r = ? ce c ge g v = 15 v; r = ? ge g v = v cemax 1200 short circuit safe operating area s scsoa 10 t = c vj v = v; v = 15 v ce ge short circuit duration t short circuit current i sc sc r = ? ; non-repetitive g 100 a r thjc thermal resistance junction to case 0.5 k/w v rrm v 1200 max. repetitive reverse voltage t = 25c vj t = 25c forward current a 60 a c 33 t = c c i f25 i f t = 25c forward voltage v 2.20 v vj 1.95 t = 125c vj v f i = a f t = 25c reverse current ma * ma vj * t = 125c vj i r r rrm t = 125c vj q i t rr rm rr 3.5 c 30 a 350 ns reverse recovery charge max. reverse recovery current reverse recovery time v = i = a; v = 0 v f fge e rec 0.9 mj reverse recovery energy r r thjc thermal resistance junction to case 0.7 k/w v = v t = 25c c t = 25c vj t = c vj vj 25 1 25 25 30 30 39 39 39 600 900 -600 600 i cm 1.8 r thch thermal resistance case to heatsink k/w r thch thermal resistance case to heatsink k/w * not applicable, see ices value above igbt diode 600 v v = v cemax 900 80 80 80 80 125 125 125 125 125 na 0.25 0.25 ixys reserves the right to change limits, conditions and dimensions. 20100702b data according to iec 60747and per semiconductor unless otherwise specified ? 2010 ixys all rights reserved
IXA33IF1200HB ratings product mar k in g date code part no. logo ixys abcd assembly code zyyww assembly line xxxxxxxxx i x a 33 if 1200 hb part number igbt xpt igbt gen 1 / std copack to-247ad (3) = = = current rating [a] reverse voltage [v] = = = = package t op c m d nm 1.2 mounting torque 0.8 t vj c 150 virtual junction temperature -40 weight g 6 symbol definition typ. max. min. conditions operation temperature unit f c n 120 mounting force with clip 20 i rms rms current 70 a per terminal 125 -40 to-247 delivery mode quantity code no. part number marking on product ordering IXA33IF1200HB 508562 tube 30 IXA33IF1200HB standard t stg c 150 storage temperature -40 threshold voltage v m ? v 0 max r 0 max slope resistance * 1.1 55 1.25 28.3 equivalent circuits for simulation t = vj i v 0 r 0 igbt diode 150 c * on die level ixys reserves the right to change limits, conditions and dimensions. 20100702b data according to iec 60747and per semiconductor unless otherwise specified ? 2010 ixys all rights reserved
IXA33IF1200HB s ? p ? p1 d2 d1 e1 4 123 l l1 2x b2 3x b b4 2x e 2x e2 d e q a a2 a1 c sym. inches millimeter min. max. min. max. a 0.185 0.209 4.70 5.30 a1 0.087 0.102 2.21 2.59 a2 0.059 0.098 1.50 2.49 d 0.819 0.845 20.79 21.45 e 0.610 0.640 15.48 16.24 e2 0.170 0.216 4.31 5.48 e 0.215 bsc 5.46 bsc l 0.780 0.800 19.80 20.30 l1 - 0.177 - 4.49 ? p 0.140 0.144 3.55 3.65 q 0.212 0.244 5.38 6.19 s 0.242 bsc 6.14 bsc b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 d1 0.515 - 13.07 - d2 0.020 0.053 0.51 1.35 e1 0.530 - 13.45 - ? p1 - 0.29 - 7.39 2(c) 3(e) (g) 1 outlines to-247 ixys reserves the right to change limits, conditions and dimensions. 20100702b data according to iec 60747and per semiconductor unless otherwise specified ? 2010 ixys all rights reserved
IXA33IF1200HB 0123 0 10 20 30 40 50 0 1020304050 0 1 2 3 4 5 6 012345 0 10 20 30 40 50 v ce [v] i c [a] q g [nc] v ge [v] 9v 11 v 5 6 7 8 9 10111213 0 10 20 30 40 50 0 20 40 60 80 100 0 5 10 15 20 13 v 40 60 80 100 120 140 1 2 3 4 e [mj] e on fig. 1 typ. output characteristics v ce [v] i c [a] v ge =15v 17 v 19 v fig. 2 typ. output characteristics i c [a] fig. 3 typ. tranfer characteristics v ge [v] fig. 4 typ. turn-on gate charge fig. 5 typ. switching energy vs. collector current e off fig. 6 typ. switching energy vs. gate resistance r g [] e [mj] i c [a] e on e off t vj =125c t vj =25c v ge =15v t vj =125c t vj =125c t vj = 25c i c =25a v ce =600v r g =39 v ce = 600 v v ge =15v t vj = 125c i c =25a v ce = 600 v v ge = 15 v t vj = 125c igbt ixys reserves the right to change limits, conditions and dimensions. 20100702b data according to iec 60747and per semiconductor unless otherwise specified ? 2010 ixys all rights reserved
IXA33IF1200HB 300 400 500 600 700 800 900 1000 1100 1 2 3 4 5 6 7 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 50 60 q rr [c] i f [a] v f [v] di f /dt [a/s] t vj = 125c t vj = 25c t vj =125c v r =600 v 15 a 30 a 60 a fig. 7 typ. forward current versus v f fig. 8 typ. reverse recov.charge q rr vs. di/dt 300 400 500 600 700 800 900 1000 1100 0 10 20 30 40 50 60 70 i rr [a] di f /dt [a/s] t vj =125c v r = 600 v 15 a 30 a 60 a fig. 9 typ. peak reverse current i rm vs. di/dt 300 400 500 600 700 800 900 1000 1100 0 100 200 300 400 500 600 700 t rr [ns] di f /dt [a/s] 15 a 30 a 60 a t vj = 125c v r =600 v fig. 10 typ. recovery time t rr versus di/dt fig.11 typ. recovery energy e rec versus di/dt 300 400 500 600 700 800 900 1000 1100 0.0 0.4 0.8 1.2 1.6 2.0 e rec [mj] di f /dt [a/s] t vj =125c v r =600 v 15 a 30 a 60 a 0.001 0.01 0.1 1 10 0.1 1 t p [s] z thjc [k/w] fig. 12 typ. transient thermal impedance diode igbt inverter-igbt inverter-frd r i t i r i t i 1 0.116 0.0006 0.16 0.0005 2 0.1 0.2 0.12 0.004 3 0.112 0.006 0.15 0.02 4 0.172 0.05 0.27 0.15 diode ixys reserves the right to change limits, conditions and dimensions. 20100702b data according to iec 60747and per semiconductor unless otherwise specified ? 2010 ixys all rights reserved
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